Products

SiC Wafers, Seed Wafers and Substrates

SiC ingot

SiC Crystal Growth Equipment

The core equipment for silicon carbide single-crystal growth is also currently the most advantageous system for growing large-size single crystals. Its working principle is based on low-pressure, high-current electricity passing through graphite electrode conductors to generate Joule heat, which indirectly heats the crucible material. This provides the appropriate temperature, atmosphere, and thermal gradient required for single-crystal growth.

Its main characteristics include the convenient design of multi-zone independent heating control for precise thermal gradient regulation, smooth isothermal contours, relatively small radial temperature gradients, as well as fast and stable crystal growth rates.